The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 30, 2009
Filed:
Apr. 14, 2003
Applicants:
Audunn Ludviksson, Scottsdale, AZ (US);
Lee Chen, Austin, TX (US);
Inventors:
Audunn Ludviksson, Scottsdale, AZ (US);
Lee Chen, Austin, TX (US);
Assignee:
Tokyo Electron Limited, Tokyo, JP;
Primary Examiner:
Int. Cl.
CPC ...
C23F 1/00 (2006.01);
U.S. Cl.
CPC ...
Abstract
A method and apparatus are provided for plasma etching of Cu-containing layers in semiconductor devices using an aluminum source in the presence of a halogen-containing plasma. The aluminum source reacts with halogenated Cu-containing surfaces and forms volatile etch products that allows for anisotropic etching of Cu-containing layers using conventional plasma etching tools.