The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 23, 2009

Filed:

Jan. 04, 2006
Applicants:

Hong-ji Lee, Hsinchu, TW;

Chun-hung Lee, Hsinchu, TW;

Nan-tsu Lian, Hsinchu, TW;

Inventors:

Hong-Ji Lee, Hsinchu, TW;

Chun-Hung Lee, Hsinchu, TW;

Nan-Tsu Lian, Hsinchu, TW;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/461 (2006.01);
U.S. Cl.
CPC ...
Abstract

A method for multi-step dielectric etching includes discharge steps between each of the etching steps in order to help release accumulated charge on the wafer produced by the previous etching step. The discharge steps stabilize the plasma discharge in each transition between etching steps. Charge elimination occurs because the negative species is relatively higher at the beginning of plasma spiking and can reach the wafer surface to reduce the accumulated charge.


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