The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 23, 2009

Filed:

Aug. 29, 2005
Applicants:

Su-yuan Chang, Hsinchu Hsien, TW;

Min-san Huang, Hsinchu, TW;

Hann-jye Hsu, Taichung County, TW;

Inventors:

Su-Yuan Chang, Hsinchu Hsien, TW;

Min-San Huang, Hsinchu, TW;

Hann-Jye Hsu, Taichung County, TW;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/44 (2006.01); H01L 21/4763 (2006.01); H01L 21/461 (2006.01);
U.S. Cl.
CPC ...
Abstract

A method of fabricating conductive lines is described. A substrate having a polysilicon layer thereon is provided. A mask layer having an opening that exposes the polysilicon layer is formed on the polysilicon layer. Then, spacers are formed on the sidewalls of the mask layer. Using the mask layer and the spacers as a mask, a portion of the polysilicon layer is removed until the substrate is exposed. After that, an insulating layer that completely fills the opening is formed over the substrate. The insulating layer has an etching selectivity different from the mask layer. Thereafter, the mask layer is removed to expose the polysilicon layer and then a metal silicide layer is formed on the upper surface of the polysilicon layer.


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