The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 23, 2009
Filed:
Sep. 16, 2005
Isao Yokokawa, Gunma, JP;
Nobuhiko Noto, Gunma, JP;
Kiyoshi Mitani, Gunma, JP;
Shin-Etsu Handotai Co., Ltd., Tokyo, JP;
Abstract
The present invention is a method for producing a semiconductor wafer, comprising at least steps of, epitaxially growing a SiGelayer (0<X<1) on an SOI wafer, forming a SiGelayer (0≦Y<X) on the epitaxially grown SiGelayer, and then enriching Ge in the epitaxially grown SiGelayer by an oxidation heat treatment so that the SiGelayer becomes an enriched SiGe layer, wherein, at least, the oxidation heat treatment is initiated from 950° C. or less under an oxidizing atmosphere, and the oxidation is performed so that the formed SiGelayer remains during a temperature rise to 950° C. Thereby, there can be provided a method for producing a semiconductor wafer by which the lattice relaxation of the SiGe layer in an SGOI wafer can be sufficiently performed by a heat treatment for a short time and its production cost can be reduced.