The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 16, 2009
Filed:
Apr. 12, 2007
Christoph Schwan, Gebhardshain, DE;
Joe Bloomquist, Austin, TX (US);
Peter Javorka, Dresden, DE;
Manfred Horstmann, Duerroehrsdorf-Dittersbach, DE;
Sven Beyer, Dresden, DE;
Markus Forsberg, Dresden, DE;
Frank Wirbeleit, Dresden, DE;
Karla Romero, Dresden, DE;
Christoph Schwan, Gebhardshain, DE;
Joe Bloomquist, Austin, TX (US);
Peter Javorka, Dresden, DE;
Manfred Horstmann, Duerroehrsdorf-Dittersbach, DE;
Sven Beyer, Dresden, DE;
Markus Forsberg, Dresden, DE;
Frank Wirbeleit, Dresden, DE;
Karla Romero, Dresden, DE;
Advanced Micro Devices, Inc., Austin, TX (US);
Abstract
By forming isolation trenches of different types of intrinsic stress on the basis of separate process sequences, the strain characteristics of adjacent active semiconductor regions may be adjusted so as to obtain overall device performance. For example, highly stressed dielectric fill material including compressive and tensile stress may be appropriately provided in the respective isolation trenches in order to correspondingly adapt the charge carrier mobility of respective channel regions.