The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 16, 2009
Filed:
Sep. 27, 2007
Avinash K. Gupta, Basking Ridge, NJ (US);
Edward Semenas, Allentown, PA (US);
Ilya Zwieback, Washington Township, NJ (US);
Avinash K. Gupta, Basking Ridge, NJ (US);
Edward Semenas, Allentown, PA (US);
Ilya Zwieback, Washington Township, NJ (US);
II-VI Incorporated, Saxonburg, PA (US);
Abstract
In a method of SiC single crystal growth, a SiC single crystal seed and polycrystalline SiC source material are provided in spaced relation inside of a graphite growth crucible along with at least one compound capable of forming SiO gas in the growth crucible. The growth crucible is heated whereupon the gaseous SiO forms and reacts with carbon in the growth crucible thereby avoiding the introduction of carbon into the SiC single crystal before and during the growth thereof and the SiC source material vaporizes and is transported via a temperature gradient in the growth crucible to the seed crystal where it precipitates and forms a SiC single crystal.