The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 09, 2009
Filed:
Sep. 11, 2006
Scott Briggs, Menlo Park, CA (US);
Aaron Eppler, Fremont, CA (US);
Scott Briggs, Menlo Park, CA (US);
Aaron Eppler, Fremont, CA (US);
Lam Research Corporation, Fremont, CA (US);
Abstract
A method of trimming the critical dimension of an isolated line to a greater extent than a dense line is provided. A mask is formed of an organic material over the etch layer wherein the mask has at least a first region with a first pattern density and a second region with a second pattern density. A surface area of the organic material in the first region is measured. A surface area of the organic material in the second region is measured. A reverse bias trim of the mask is provided, wherein a ratio of a trim rate of the organic material in the first region to a trim rate of the organic material in the second region is related to a ratio of the measured surface area of the organic material in the first region to the measured surface area of the organic material in the second region.