The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 02, 2009
Filed:
Mar. 08, 2004
Yuuichi Hirano, Tokyo, JP;
Shigenobu Maeda, Seoul, KR;
Takuji Matsumoto, Kanagawa, JP;
Takashi Ipposhi, Tokyo, JP;
Shigeto Maegawa, Tokyo, JP;
Yuuichi Hirano, Tokyo, JP;
Shigenobu Maeda, Seoul, KR;
Takuji Matsumoto, Kanagawa, JP;
Takashi Ipposhi, Tokyo, JP;
Shigeto Maegawa, Tokyo, JP;
Renesas Technology Corp., Tokyo, JP;
Abstract
The semiconductor device has a silicon layer (SOI layer) () formed through a silicon oxide film () on a support substrate (). A transistor (T) is formed in the SOI layer (). The wiring () is connected with a source of the transistor (T) through a contact plug (). A back metal () is formed on an under surface (back surface) of the support substrate () and said back metal () is connected with the wiring () through a heat radiating plug (). The contact plug (), the heat radiating plug () the wiring () and the back metal () is made of a metal such as aluminum, tungsten and so on which has a higher thermal conductivity than that of the silicon oxide film () and the support substrate ().
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile