The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 02, 2009
Filed:
Jun. 22, 2007
Sean S. Kang, Fremont, CA (US);
Sangheon Lee, San Jose, CA (US);
Wan-lin Chen, Sunnyvale, CA (US);
Eric A. Hudson, Berkeley, CA (US);
S. M. Reza Sadjadi, Saratoga, CA (US);
Gan Ming Zhao, Cupertino, CA (US);
Sean S. Kang, Fremont, CA (US);
Sangheon Lee, San Jose, CA (US);
Wan-Lin Chen, Sunnyvale, CA (US);
Eric A. Hudson, Berkeley, CA (US);
S. M. Reza Sadjadi, Saratoga, CA (US);
Gan Ming Zhao, Cupertino, CA (US);
Lam Research Corporation, Fremont, CA (US);
Abstract
A feature in a layer is provided. A photoresist layer is formed over the layer. The photoresist layer is patterned to form photoresist features with photoresist sidewalls, where the photoresist features have a first critical dimension. A conformal layer is deposited over the sidewalls of the photoresist features to reduce the critical dimensions of the photoresist features. Features are etched into the layer, wherein the layer features have a second critical dimension, which is less than the first critical dimension.