The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 02, 2009

Filed:

Apr. 30, 2008
Applicants:

Kevin Shawn Petrarca, Newburgh, NY (US);

John Charles Petrus, Stanfordville, NY (US);

Karl W. Barth, Poughkeepsie, NY (US);

Kaushik A. Kumar, Poughkeepsie, NY (US);

Inventors:

Kevin Shawn Petrarca, Newburgh, NY (US);

John Charles Petrus, Stanfordville, NY (US);

Karl W. Barth, Poughkeepsie, NY (US);

Kaushik A. Kumar, Poughkeepsie, NY (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/4763 (2006.01);
U.S. Cl.
CPC ...
Abstract

A method for forming a dielectric cap layer over an interconnect layer formed by a back-end-of-the-line (BEOL) interconnect process, the interconnect process including: lithography, reactive ion etching (RIE), metal filling of BEOL conductors, and chemical-mechanical polishing (CMP), wherein a sacrificial material resides between conductors of the interconnect layer, and wherein the dielectric cap layer is made porous through an oxidation process.


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