The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 02, 2009
Filed:
Mar. 29, 2007
Soo Hyun Kim, Seoul, KR;
Noh Jung Kwak, Seongnam-si, KR;
Baek Mann Kim, Yongin-si, KR;
Young Jin Lee, Yongin-si, KR;
Sun Woo Hwang, Icheon-si, KR;
Kwan Yong Lim, Icheon-si, KR;
Soo Hyun Kim, Seoul, KR;
Noh Jung Kwak, Seongnam-si, KR;
Baek Mann Kim, Yongin-si, KR;
Young Jin Lee, Yongin-si, KR;
Sun Woo Hwang, Icheon-si, KR;
Kwan Yong Lim, Icheon-si, KR;
Hynix Semiconductor Inc., Kyoungki-do, KR;
Abstract
A tungsten polymetal gate is made by forming a gate insulation layer and a polysilicon layer on a semiconductor substrate; depositing a barrier layer on the polysilicon layer; depositing a tungsten nucleation layer on the barrier layer through an ALD process; depositing a tungsten layer on the tungsten nucleation layer through a CVD process; depositing a hard mask layer on the tungsten layer; and etching the hard mask layer, the tungsten layer, the tungsten nucleation layer, the barrier layer, the polysilicon layer, and the gate insulation layer.