The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 02, 2009
Filed:
Nov. 03, 2005
Chong Kwang Chang, Fishkill, NY (US);
Haoren Zhuang, Hopewell Junction, NY (US);
Matthias Lipinski, Poughkeepsie, NY (US);
Shailendra Mishra, Beacon, NY (US);
O Sung Kwon, Wappingers Falls, NY (US);
Tjin Tjin Tjoa, Singapore, SG;
Young Gun Ko, Fishkill, NY (US);
Chong Kwang Chang, Fishkill, NY (US);
Haoren Zhuang, Hopewell Junction, NY (US);
Matthias Lipinski, Poughkeepsie, NY (US);
Shailendra Mishra, Beacon, NY (US);
O Sung Kwon, Wappingers Falls, NY (US);
Tjin Tjin Tjoa, Singapore, SG;
Young Gun Ko, Fishkill, NY (US);
Samsung Electronics Co., Ltd., , KR;
Chartered Semiconductor Manufacturing Ltd., Singapore, SG;
Infineon Technologies AG, , DE;
Abstract
Integrated circuit transistors may be fabricated by simultaneously removing a photoresist layer on a first active area of an integrated circuit substrate and a carbon-containing layer on a second active area of the integrated circuit substrate, to expose a nitride stress-generating layer on the second active area. A single mask may be used to define the second active area for removal of the photoresist layer on the first active area and for implanting source/drain regions into the second active area.