The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 12, 2009
Filed:
Dec. 14, 2006
Shigenobu Maeda, Tokyo, JP;
Shigeto Maegawa, Tokyo, JP;
Takuji Matsumoto, Tokyo, JP;
Renesas Technology Corp., Tokyo, JP;
Abstract
There is provided a semiconductor device which is formed on a semiconductor substrate and allows effective use of the feature of the semiconductor substrate, and there is also provided a method of manufacturing the same. An N-channel MOS transistor including a P-type body layer (), and a P-type active layer () for body voltage application which is in contact with the P-type body layer () are formed on an SOI substrate which is formed to align a <110> crystal direction of a support substrate () with a <100> crystal direction of an SOI layer (). A path connecting the P-type body layer () and the P-type active layer () for body voltage application is aligned parallel to the <100> crystal direction of the SOI layer (). Since hole mobility is higher in the <100> crystal direction, parasitic resistance (Ra, Rb) can be reduced in the above path. This speeds up voltage transmission to the P-type body layer () and improves voltage fixing capability in the P-type body layer ().