The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 12, 2009
Filed:
Jul. 24, 2006
Applicants:
Jih-wen Chou, Hsinchu, TW;
Chih-hsun Chu, Hsinchu, TW;
Hsiu-chuan Shu, Jhubei, TW;
Inventors:
Assignee:
ProMOS Technologies Inc., Hsinchu, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/3205 (2006.01);
U.S. Cl.
CPC ...
Abstract
A method of fabricating a recess channel transistor is provided. First, a hard mask is formed on a doped-semiconductor layer and a substrate. The doped-semiconductor layer and the substrate are etched to form a trench and define a source/drain in the doped-semiconductor layer. An implantation process is performed with a tilt angle on sidewalls of the trench to form an implant area. A thermal oxidation process is performed to form an oxide layer. The oxide layer comprises a first thickness on the source/drain in the sidewalls of the trench and a second thickness on the other portion in the sidewalls of the trench.