The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 12, 2009
Filed:
Oct. 20, 2005
Applicants:
Wen-hsien Huang, Tainan County, TW;
Min-chieh Yang, Kaohsiung, TW;
Jiunn-hsing Liao, Tainan County, TW;
Inventors:
Wen-Hsien Huang, Tainan County, TW;
Min-Chieh Yang, Kaohsiung, TW;
Jiunn-Hsing Liao, Tainan County, TW;
Assignee:
United Microelectronics Corp., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/26 (2006.01);
U.S. Cl.
CPC ...
Abstract
A method for increasing the removal rate of a photoresist layer used as an ion implant mask. The method includes performing a pre-treatment of a substrate, such as a plasma process, before forming the photoresist layer. The method can be applied to the fabrication of semiconductor devices for increasing the removal rate of the photoresist layer.
Huang, Wen-Hsien. (2009). Method of fabricating semiconductor devices (U.S. Patent No. 7531434). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/7531434
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile