The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 05, 2009
Filed:
Jun. 07, 2006
Shenlin Chen, Boise, ID (US);
Trung Tri Doan, Boise, ID (US);
Guy T. Blalock, Boise, ID (US);
Lyle D. Breiner, Meridian, ID (US);
Er-xuan Ping, Meridian, ID (US);
Shenlin Chen, Boise, ID (US);
Trung Tri Doan, Boise, ID (US);
Guy T. Blalock, Boise, ID (US);
Lyle D. Breiner, Meridian, ID (US);
Er-Xuan Ping, Meridian, ID (US);
Micron Technology, Inc., Boise, ID (US);
Abstract
The invention includes a method of forming a rugged semiconductor-containing surface. A first semiconductor layer is formed over a substrate, and a second semiconductor layer is formed over the first semiconductor layer. Subsequently, a third semiconductor layer is formed over the second semiconductor layer, and semiconductor-containing seeds are formed over the third semiconductor layer. The seeds are annealed to form the rugged semiconductor-containing surface. The first, second and third semiconductor layers are part of a common stack, and can be together utilized within a storage node of a capacitor construction. The invention also includes semiconductor structures comprising rugged surfaces. The rugged surfaces can be, for example, rugged silicon.