The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 05, 2009

Filed:

Jul. 11, 2005
Applicants:

Jeong-yun Lee, Yongin-si, KR;

Seong-woon Choi, Suwon-si, KR;

Il-yong Jang, Yongin-si, KR;

Won-suk Ahn, Yongin-si, KR;

Sung-jae Han, Seongnam-si, KR;

Inventors:

Jeong-Yun Lee, Yongin-si, KR;

Seong-Woon Choi, Suwon-si, KR;

Il-Yong Jang, Yongin-si, KR;

Won-Suk Ahn, Yongin-si, KR;

Sung-Jae Han, Seongnam-si, KR;

Assignee:

Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03F 1/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

A method of repairing a phase shift mask includes exposing upper and side surfaces of the phase shift pattern of the mask, selectively forming a passivation layer on the surfaces of the exposed phase shift patterns, and then cleaning the phase shift mask on which the passivation layers are formed. The repairing of the phase shift mask is carried out in the midst of a series of photolithographic exposure processes in which the phase shift mask is used to transfer an image to a photoresist layer or layers. After the photomask is cleaned, a determination is made as to whether the transmittance of the phase shift pattern is above a threshold value.


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