The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 05, 2009
Filed:
Jun. 04, 2001
Tadaaki Kaneko, Sanda, JP;
Yasushi Asaoka, Sanda, JP;
Naokatsu Sano, Sanda, JP;
Kwansei Gakuin Educational Foundation, Hyogo, JP;
Abstract
The invention is a high-temperature liquid phase growth method using a very thin Si melt layer and characterized in that there is no need of strict temperature difference control between the growing crystal surface and a raw material supply polycrystal, and control of impurity addition is possible. The grown single crystal SiC is characterized in that no fine grain boundaries exist therein, the density of micropipe defects in the growth surface is 1/cmor less, and the crystal has a terrace of 10 micrometer or more and a multi-molecular layer step as the minimum unit of a three-molecular layer.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile