The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 28, 2009
Filed:
Dec. 16, 2005
Shuqiang Chen, Sunnyvale, CA (US);
Guoguang LI, Fremont, CA (US);
Shuqiang Chen, Sunnyvale, CA (US);
Guoguang Li, Fremont, CA (US);
n&k Technology, Inc., San Jose, CA (US);
Abstract
Methods and apparatus for optical characterization based on symmetry-reduced 2-D RCWA calculations are provided. The invention is applicable to gratings having a grating reflection symmetry plane. A sample can be illuminated at normal incidence or at a non-zero angle of incidence such that the plane of incidence is parallel to or identical with the symmetry plane. The diffracted field components are either symmetric or anti-symmetric with respect to the grating symmetry plane. This symmetry is exploited to provide a symmetry-reduced 2-D RCWA having reduced matrix dimension (by about a factor of two) that is mathematically equivalent to a conventional 2-D RCWA. For normal incidence on a grating having two reflection symmetry planes, a symmetry-reduced 2-D RCWA having reduced matrix dimension (by about a factor of four) is provided. This normal incidence RCWA can be used to approximately characterize a sample illuminated at non-normal incidence. Approximation accuracy can be improved by modifying either the grating depth or the grating refractive index.