The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 28, 2009
Filed:
Mar. 27, 2007
Takashi Yokoyama, Kanagawa, JP;
Toshiaka Saishoji, Kanagawa, JP;
Toshirou Kotooka, Kanagawa, JP;
Kazuyoshi Sakatani, Kanagawa, JP;
Takashi Yokoyama, Kanagawa, JP;
Toshiaka Saishoji, Kanagawa, JP;
Toshirou Kotooka, Kanagawa, JP;
Kazuyoshi Sakatani, Kanagawa, JP;
Sumco Techxiv Corporation, Kanagawa, JP;
Abstract
A method for controlling the temperature gradient on the side surface of a silicon single crystal, the height of a solid-liquid interface, and the oxygen concentration in the longitudinal direction of the silicon single crystal is provided in order to manufacture a defect-free silicon single crystal whose oxygen concentration is controlled to a predetermined value rapidly and stably. By disposing a cylindrical cooler around the silicon single crystal, and adjusting the pulling speed of the silicon single crystal, the rotation speed of a crucible that stores molten silicon and the rotation speed of the silicon single crystal, and the output ratio of a multi-heater separated into at least two in the longitudinal direction of the silicon single crystal disposed around the crucible, the temperature gradient on the side surface, the height of the solid-liquid interface, and the oxygen concentration in the longitudinal direction of the silicon single crystal are controlled.