The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 28, 2009
Filed:
May. 24, 2007
Yuling Liu, Tianjin, CN;
Jianxin Zhang, Tianjin, CN;
Weiwei LI, Tianjin, CN;
Yanyan Huang, Tianjin, CN;
Yongchao Bian, Tianjin, CN;
NA Liu, Tianjin, CN;
Yuling Liu, Tianjin, CN;
Jianxin Zhang, Tianjin, CN;
Weiwei Li, Tianjin, CN;
Yanyan Huang, Tianjin, CN;
Yongchao Bian, Tianjin, CN;
Na Liu, Tianjin, CN;
Other;
Abstract
This invention provides a method for eliminating the surface stress of a silicon wafer comprising forming one or more anti-stress groove(s) on the surface of the silicon wafer. These anti-stress grooves can reduce or eliminate the surface stress of silicon wafer effectively to avoid the formation of slip lines and dislocation arrangements, which may induce the p-n junction to conduct or the leakage current to increase. The process is highly efficient and low in cost. It is simple to manage and does not require additional equipment beyond that already used for processing of silicon wafers.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile