The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 21, 2009
Filed:
Mar. 30, 2006
LI Wu, Fremont, CA (US);
Elina Szeto, San Jose, CA (US);
Michael Kwon, San Jose, CA (US);
Tokyo Electron Limited, Tokyo, JP;
Abstract
One or more features of multiple patterned layers formed on a semiconductor are determined by obtaining a first measured diffraction signal measured from a first patterned layer before a second patterned layer is formed on top of the first patterned layer. One or more features of the first patterned layer are determined using the first measured diffraction signal. Values of one or more profile parameters of a hypothetical profile of the second patterned layer in combination with the first patterned layer are fixed. A second measured diffraction signal measured from the second patterned layer after the second patterned layer has been formed on top of the first patterned layer is obtained. One or more features of the second patterned layer are determined based on the second measured diffraction signal and the fixed values of the one or more profile parameters.