The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 21, 2009
Filed:
May. 28, 2004
Eiji Oue, Mobara, JP;
Katsuyoshi Washio, Tokorozawa, JP;
Hiromi Shimamoto, Iruma, JP;
Katsuya Oda, Hachioji, JP;
Makoto Miura, Kokubunji, JP;
Eiji Oue, Mobara, JP;
Katsuyoshi Washio, Tokorozawa, JP;
Hiromi Shimamoto, Iruma, JP;
Katsuya Oda, Hachioji, JP;
Makoto Miura, Kokubunji, JP;
Renesas Technology Corp., Tokyo, JP;
Abstract
A bipolar transistor is provided in which both the base resistance and the base-collector capacitance are reduced and which is capable of operating at a high cutoff frequency. The semiconductor device is structured so that the emitter and extrinsic base are separated from each other by an insulator sidewall and the bottom faces of the insulator sidewall, and the emitter are approximately on the same plane. The extrinsic base electrode and the collector region are separated from each other by an insulator.