The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 21, 2009
Filed:
May. 18, 2006
Robert J. Falster, London, GB;
Vladimir V. Voronkov, Merano, IT;
Galina I. Voronkova, Merano, IT;
Anna V. Batunina, Moscow, RU;
Robert J. Falster, London, GB;
Vladimir V. Voronkov, Merano, IT;
Galina I. Voronkova, Merano, IT;
Anna V. Batunina, Moscow, RU;
MEMC Electronic Materials, Inc., St. Peters, MO (US);
Abstract
The present invention generally relates to a high resistivity CZ silicon wafer, or a high resistivity silicon structure derived therefrom, and a process for the preparation thereof. In particular, the high resistivity silicon structure comprises a large diameter CZ silicon wafer as the substrate thereof, wherein the resistivity of the substrate wafer is decoupled from the concentration of acceptor atoms (e.g., boron) therein, the resistivity of the substrate being substantially greater than the resistivity as calculated based on the concentration of said acceptor atoms therein.