The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 21, 2009
Filed:
Mar. 31, 2004
Tadahiro Ohmi, Sendai-shi, Miyagi, JP;
Akinobu Teramoto, Sendai, JP;
Hidetoshi Wakamatsu, Sendai, JP;
Yasuo Kobayashi, Nirasaki, JP;
Tadahiro Ohmi, Sendai-shi, Miyagi, JP;
Akinobu Teramoto, Sendai, JP;
Hidetoshi Wakamatsu, Sendai, JP;
Yasuo Kobayashi, Nirasaki, JP;
Other;
Tokyo Electron Limited, Tokyo, JP;
Abstract
In order to provide a semiconductor device having good quality by keeping the relative permittivity of a High-K insulation film in a high state, or to provide a method for manufacturing a semiconductor device in which the relative permittivity of the High-K insulation film can be kept in a high state, a semiconductor device is disclosed that includes a silicon substrate, a gate electrode layer, and a gate insulation film between the silicon substrate and the gate electrode layer. The gate insulation film is a high relative permittivity (high-k) film being formed by performing a nitriding treatment on a mixture of a metal and silicon. The High-K film itself becomes a nitride so as to prevent SiOfrom being formed.