The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 21, 2009
Filed:
Apr. 28, 2006
Shu-jung Tseng, Tai-Chung, TW;
Chi Chang Su, Hsin-Chu, TW;
Chien-wu Chu, Taoyuan, TW;
You-wen Yau, Taipei, TW;
Long Sheng Yeou, Hsinchu, TW;
Shu-Jung Tseng, Tai-Chung, TW;
Chi Chang Su, Hsin-Chu, TW;
Chien-Wu Chu, Taoyuan, TW;
You-Wen Yau, Taipei, TW;
Long Sheng Yeou, Hsinchu, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Abstract
A method for reducing the scrap rate of fuse structures after laser repairing is provided. The method includes providing a semiconductor wafer comprising integrated circuits, performing a yield test on the semiconductor wafer to determine defective circuits, predetermining a wavelength limit, and keeping the semiconductor wafer away from lights having wavelengths lower than the wavelength limit. The defects on the semiconductors wafer are repaired by burning laser fuses. For copper-based fuse structures, the wavelength limit is about 550 nm.