The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 14, 2009
Filed:
Jan. 13, 2005
Tomonori Okudaira, Hyogo, JP;
Takeshi Hayashi, Hyogo, JP;
Hiroshi Fujiwara, Hyogo, JP;
Yasushi Fujita, Hyogo, JP;
Kiyoteru Kobayashi, Hyogo, JP;
Tomonori Okudaira, Hyogo, JP;
Takeshi Hayashi, Hyogo, JP;
Hiroshi Fujiwara, Hyogo, JP;
Yasushi Fujita, Hyogo, JP;
Kiyoteru Kobayashi, Hyogo, JP;
Renesas Technology Corp., Tokyo, JP;
Tokyo Electron Limited, Tokyo, JP;
Abstract
A manufacturing method of a semiconductor device including a TiN film, including a deposition step of forming a TiN film by the CVD method, an anneal step of performing a heat treatment to the formed TiN film in an atmosphere of NHgas, an NHgas purge step of purging NHgas, and a step of further repeating the deposition step, the anneal step, and the NHgas purge step for at least one time. The deposition step is performed using titanium halide gas and NHgas as material gases and with a deposition temperature of 300° C.-450° C. to form the TiN film by a thickness of 1 nm-5 nm for each deposition step. Thus, a semiconductor device in which generation of irregularly grown objects in the TiN film is suppressed and a manufacturing method thereof can be provided.