The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 14, 2009
Filed:
Jun. 05, 2002
Applicants:
Shuichi Irumata, Ibaraki, JP;
Ryo Suzuki, Ibaraki, JP;
Inventors:
Shuichi Irumata, Ibaraki, JP;
Ryo Suzuki, Ibaraki, JP;
Assignee:
Nippon Mining & Metals Co., Ltd., Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
C01B 21/068 (2006.01);
U.S. Cl.
CPC ...
Abstract
The present invention relates to a hafnium silicide target for forming a gate oxide film composed of HfSi. Obtained is a hafnium silicide target superior in workability and embrittlement resistance, and suitable for forming a HfSiO film and HfSiON film that may be used as a high dielectric gate insulation film in substitute for a SiOfilm, and to the manufacturing method thereof.
Irumata, Shuichi. (2009). Hafnium silicide target for forming gate oxide film and method for preparation thereof (U.S. Patent No. 7517515). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/7517515
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile