The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 14, 2009
Filed:
Aug. 05, 2003
Shuhei Ogawa, Yamanashi-ken, JP;
Rie Inazawa, Legal Representative, Yamanashi-Ken, JP;
Shuhei Ogawa, Yamanashi-ken, JP;
Rie Inazawa, legal representative, Yamanashi-Ken, JP;
Tokyo Electron Limited, Tokyo, JP;
Abstract
The present invention is a method of etching a lower layer film () of an organic material formed on a surface layer () of a substrate, using an upper layer film () of an Si-containing organic material as a mask. A mixed gas containing an NHgas and an Ogas is supplied into the processing vessel as an etching gas, so as to perform etching by a plasma of the etching gas. When the etching gas is supplied into the processing vessel, a CD shift value of etching can be controlled by adjusting a flow ratio of Ogas to the NHgas. Specifically, a satisfactory CD shift value can be obtained when the flow ratio is from 0.5 to 20%, and preferably, 5 to 10%.