The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 07, 2009
Filed:
Jan. 10, 2005
Horng-huei Tseng, Hsin-Chu, TW;
Jhy-chyum Guo, Hsin-Chu, TW;
Chenming HU, Hsin-Chu, TW;
Da-chi Lin, Hsin-Chu, TW;
Horng-Huei Tseng, Hsin-Chu, TW;
Jhy-Chyum Guo, Hsin-Chu, TW;
Chenming Hu, Hsin-Chu, TW;
Da-Chi Lin, Hsin-Chu, TW;
Taiwan Semiconductor Manufacturing Company, Hsin-Chu, TW;
Abstract
Provided is a semiconductor transistor device including a substrate having at least two regions, a semiconductive region extending to a first surface of the substrate and an insulative region extending to a second surface of the substrate. The semiconductor transistor device also includes a patterned semiconductor structure overlying both surfaces of the substrate. The patterned semiconductor structure includes a source or drain region overlying the second surface of the substrate. The semiconductor transistor device further includes a patterned gate structure overlying the patterned semiconductor structure.