The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 07, 2009
Filed:
Jun. 08, 2006
Applicants:
Jong Shik Yoon, San Diego, CA (US);
Amitava Chatterjee, Plano, TX (US);
Haowen Bu, Plano, TX (US);
Inventors:
Assignee:
Texas Instruments Incorporated, Dallas, TX (US);
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/336 (2006.01);
U.S. Cl.
CPC ...
Abstract
A method of manufacturing a semiconductor device comprising removing a first oxide layer deposited over a semiconductor substrate, thereby exposing source and drain regions of the substrate. The first oxide layer is configured as an etch-stop for forming silicon nitride sidewall spacers of a gate structure located adjacent to the source and drain regions. The method further comprises depositing a second oxide layer selectively on the exposed source and drain regions and then removing lateral segments of the silicon nitride sidewall spacers.