The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 31, 2009
Filed:
Jan. 26, 2006
Applicants:
Chih-jen Mao, Tainan County, TW;
Kuo-wei Yang, Hsinchu, TW;
Hui-shen Shih, Changhua Hsien, TW;
Chun-han Chuang, Hsinchu, TW;
Inventors:
Chih-Jen Mao, Tainan County, TW;
Kuo-Wei Yang, Hsinchu, TW;
Hui-Shen Shih, Changhua Hsien, TW;
Chun-Han Chuang, Hsinchu, TW;
Assignee:
United Microelectronics Corp., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/477 (2006.01);
U.S. Cl.
CPC ...
Abstract
The invention is directed to a method for manufacturing semiconductor device. The method comprises steps of providing a substrate and then forming a dielectric material-containing device over the substrate. A plasma vapor deposition process is performed to form a dielectric layer over the substrate. A first baking process is performed.