The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 31, 2009
Filed:
Feb. 16, 2007
Chen-nan Yeh, Hsin Chih, TW;
Mong Song Liang, Hsin-Chu, TW;
Ryan Chia-jen Chen, Chiaya, TW;
Yuan-hung Chiu, Taipei, TW;
Chen-Nan Yeh, Hsin Chih, TW;
Mong Song Liang, Hsin-Chu, TW;
Ryan Chia-Jen Chen, Chiaya, TW;
Yuan-Hung Chiu, Taipei, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Abstract
A method for fabricating a dual-gate semiconductor device. A preferred embodiment comprises forming a gate stack having a first portion and a second portion, the first portion and the second portion including a different composition of layers, forming photoresist structures on the gate stack to protect the material to be used for the gate structures, etching away a portion of the unprotected material, forming recesses adjacent to at least one of the gate structures in the substrate upon which the gate structures are disposed, and forming a source region and the drained region in the respective recesses. The remaining portions of the gate stack layers that are not a part of a gate structure are then removed. In a particularly preferred embodiment, an oxide is formed on the vertical sides of the gate structures prior to etching to create the source and drain regions.