The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 31, 2009
Filed:
May. 02, 2006
Steven C. Shannon, San Mateo, CA (US);
Alexander Paterson, San Jose, CA (US);
Theodoros Panagopoulos, San Jose, CA (US);
John P. Holland, San Jose, CA (US);
Dennis S. Grimard, Ann Arbor, MI (US);
Daniel J. Hoffman, Saratoga, CA (US);
Steven C. Shannon, San Mateo, CA (US);
Alexander Paterson, San Jose, CA (US);
Theodoros Panagopoulos, San Jose, CA (US);
John P. Holland, San Jose, CA (US);
Dennis S. Grimard, Ann Arbor, MI (US);
Daniel J. Hoffman, Saratoga, CA (US);
Applied Materials, Inc., Santa Clara, CA (US);
Abstract
A method for controlling a plasma in a semiconductor substrate processing chamber is provided. The method includes the steps of supplying a first RF signal to a first electrode within the processing chamber at a first frequency selected to cause plasma sheath oscillation at the first frequency; and supplying a second RF signal from the source to the first electrode at a second frequency selected to cause plasma sheath oscillation at the second frequency, wherein the second frequency is different from the first frequency by a differential equal to a desired frequency selected to cause plasma sheath oscillation at the desired frequency.