Method and system for reducing the variation in film thickness on a plurality of semiconductor wafers having multiple deposition paths in a semiconductor manufacturing process

Abstract

A method and system for reducing the variation in film thickness on a plurality of semiconductor wafers having multiple deposition paths in a semiconductor manufacturing process is disclosed. A film of a varying input thickness is applied to semiconductor wafers moving through various film deposition paths. The deposition path of each of the semiconductor wafers is recorded. A subset of semiconductor wafers is measured and an average film input thickness corresponding to each of the film deposition paths is calculated. If semiconductor wafer in the specific film deposition path does not have measurement data, by default it uses historical measurement data. The average film input thickness of the deposition path corresponding to a given semiconductor wafer is then used to modify the recipe of a process tool, such as a Chemical Mechanical Planarization (CMP) Process Tool. An improved manufacturing process is achieved without the use of excess measurements.