The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 24, 2009
Filed:
Feb. 20, 2007
Puo-yu Chiang, Yilan County, TW;
Tsung-yi Huang, Hsinchu, TW;
Fu-hsin Chen, Hsinchu County, TW;
Ting-pang LI, Hsinchu, TW;
Chung-yeh Wu, Taichung, TW;
Puo-Yu Chiang, Yilan County, TW;
Tsung-Yi Huang, Hsinchu, TW;
Fu-Hsin Chen, Hsinchu County, TW;
Ting-Pang Li, Hsinchu, TW;
Chung-Yeh Wu, Taichung, TW;
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Abstract
A high-voltage transistor device has a first well region with a first conductivity type in a semiconductor substrate, and a second well region with a second conductivity type in the semiconductor substrate substantially adjacent to the first well region. A field ring with the second conductivity type is formed on a portion of the first well region, and the top surface of the field ring has at least one curved recess. A field dielectric region is formed on the field ring and extends to a portion of the first well region. A gate structure is formed over a portion of the field dielectric region and extends to a portion of the second well region.