The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 24, 2009
Filed:
Aug. 11, 2004
Emmanuil H. Lingunis, San Jose, CA (US);
Ning Cheng, Cupertino, CA (US);
Mark Ramsbey, Sunnyvale, CA (US);
Kouros Ghandehari, Santa Clara, CA (US);
Anna Minvielle, San Jose, CA (US);
Hung-eil Kim, San Jose, CA (US);
Emmanuil H. Lingunis, San Jose, CA (US);
Ning Cheng, Cupertino, CA (US);
Mark Ramsbey, Sunnyvale, CA (US);
Kouros Ghandehari, Santa Clara, CA (US);
Anna Minvielle, San Jose, CA (US);
Hung-Eil Kim, San Jose, CA (US);
Spansion LLC, Sunnyvale, CA (US);
Abstract
A method is provided for creating optical features on a lithography mask for use in patterning a series of openings of an etch mask on a semiconductor device wafer, comprising creating a series of optical features spaced on the lithography mask from one another along a first direction, where the individual optical features have first mask feature dimensions along the first direction that are smaller than a desired first dimension for the openings to be patterned in the etch mask.