The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 24, 2009
Filed:
Oct. 18, 2004
Shankar N. Chandran, Milpitas, IN;
Scott Hendrickson, San Jose, CA (US);
Gwendolyn D. Jones, Sunnyvale, CA (US);
Shankar Venkataraman, Santa Clara, CA (US);
Ellie Yieh, Millbrae, CA (US);
Shankar N. Chandran, Milpitas, IN;
Scott Hendrickson, San Jose, CA (US);
Gwendolyn D. Jones, Sunnyvale, CA (US);
Shankar Venkataraman, Santa Clara, CA (US);
Ellie Yieh, Millbrae, CA (US);
Applied Materials, Inc., Santa Clara, CA (US);
Abstract
A method and apparatus that reduces the time required to clean a processing chamber employing a reactive plasma cleaning process. A plasma is formed in an Astron fluorine source generator from a flow of substantially pure inert-source gas. After formation of the plasma, a flow of a fluorine source gas is introduced therein such that the fluorine source flow accelerates at a rate no greater than 1.67 standard cubic centimeters per second(scc/s). In this fashion, the plasma contains a plurality of radicals and dissociated inert-source gas atoms, defining a cleaning mixture. The ratio of inert-source gas to fluorine source is greater than 1:1.