The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 17, 2009
Filed:
Feb. 12, 2008
Vi Vuong, Fremont, CA (US);
Emmanuel Drege, San Jose, CA (US);
Junwei Bao, Fremont, CA (US);
Srinivas Doddi, Fremont, CA (US);
Xinhui Niu, San Jose, CA (US);
Nickhil Jakatdar, Los Altos, CA (US);
Vi Vuong, Fremont, CA (US);
Emmanuel Drege, San Jose, CA (US);
Junwei Bao, Fremont, CA (US);
Srinivas Doddi, Fremont, CA (US);
Xinhui Niu, San Jose, CA (US);
Nickhil Jakatdar, Los Altos, CA (US);
Timbre Technologies, Inc., Santa Clara, CA (US);
Abstract
A profile model for use in optical metrology of structures in a wafer is selected, the profile model having a set of geometric parameters associated with the dimensions of the structure. The set of geometric parameters is selected to a set of optimization parameters. The number of optimization parameters within the set of optimization parameters is less than the number of geometric parameters within the set of geometric parameters. A set of selected optimization parameters is selected from the set of optimization parameters. The parameters of the set of selected geometric parameters are used as parameters of the selected profile model. The selected profile model is tested against one or more termination criteria.