The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 17, 2009
Filed:
Aug. 09, 2006
Yan Du, Sunnyvale, CA (US);
Meihua Shen, Fremont, CA (US);
Shashank Deshmukh, San Jose, CA (US);
Applied Materials, Inc., Santa Clara, CA (US);
Abstract
Disclosed herein is a method of pattern etching a layer of a silicon-containing dielectric material. The method employs a plasma source gas including CFto CHF, where the volumetric ratio of CFto CHFis within the range of about 2:3 to about 3:1; more typically, about 1:1 to about 2:1. Etching is performed at a process chamber pressure within the range of about 4 mTorr to about 60 mTorr. The method provides a selectivity for etching a silicon-containing dielectric layer relative to photoresist of 1.5:1 or better. The method also provides an etch profile sidewall angle ranging from 88° to 92° between said etched silicon-containing dielectric layer and an underlying horizontal layer. in the semiconductor structure. The method provides a smooth sidewall when used in combination with certain photoresists which are sensitive to 193 nm radiation.