The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 17, 2009
Filed:
Apr. 04, 2006
Steven Sapp, Santa Cruz, CA (US);
Hamza Yilmaz, Saratoga, CA (US);
Christopher Lawrence Rexer, Mountaintop, PA (US);
Daniel Calafut, San Jose, CA (US);
Steven Sapp, Santa Cruz, CA (US);
Hamza Yilmaz, Saratoga, CA (US);
Christopher Lawrence Rexer, Mountaintop, PA (US);
Daniel Calafut, San Jose, CA (US);
Fairchild Semiconductor Corporation, South Portland, ME (US);
Abstract
A monolithically integrated field effect transistor and Schottky diode includes gate trenches extending into a semiconductor region. Source regions having a substantially triangular shape flank each side of the gate trenches. A contact opening extends into the semiconductor region between adjacent gate trenches. A conductor layer fills the contact opening to electrically contact: (a) the source regions along at least a portion of a slanted sidewall of each source region, and (b) the semiconductor region along a bottom portion of the contact opening, wherein the conductor layer forms a Schottky contact with the semiconductor region.