The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 10, 2009
Filed:
May. 30, 2006
Applicants:
Tommy Lai, Kowloon, HK;
Pradeep Ramachandramurthy Yelehanka, Singapore, SG;
Jia Zhen Zheng, Singapore, SG;
Weining LI, Shanghai, CN;
Inventors:
Tommy Lai, Kowloon, HK;
Pradeep Ramachandramurthy Yelehanka, Singapore, SG;
Jia Zhen Zheng, Singapore, SG;
Weining Li, Shanghai, CN;
Assignee:
Chartered Semiconductor Manufacturing Ltd., Singapore, SG;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/792 (2006.01);
U.S. Cl.
CPC ...
Abstract
An integrated circuit structure includes providing a semiconductor substrate and forming at least one oxide-nitride-oxide dielectric layer above the semiconductor substrate. At least one implantation is formed into at least one area of the semiconductor substrate beneath the oxide-nitride-oxide dielectric layer subsequent to the formation of the oxide-nitride-oxide dielectric layer.