The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 10, 2009
Filed:
Oct. 10, 2006
Applicants:
Fredrick D. Fishburn, Boise, ID (US);
Terrence B. Mcdaniel, Boise, ID (US);
Richard H. Lane, Boise, ID (US);
Inventors:
Fredrick D. Fishburn, Boise, ID (US);
Terrence B. McDaniel, Boise, ID (US);
Richard H. Lane, Boise, ID (US);
Assignee:
Micron Technology, Inc., Boise, ID (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/417 (2006.01);
U.S. Cl.
CPC ...
Abstract
A method used to form a semiconductor device provides a silicide layer on a plurality of transistor word lines and on a plurality of conductive plugs. In one embodiment, the word lines, one or more sacrificial dielectric layers on the word lines, conductive plugs, and a conductive enhancement layer are formed through the use of a single mask. An in-process semiconductor device which may be formed using one embodiment of the inventive method is also described.