The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 10, 2009
Filed:
Aug. 16, 2006
Yi-chou Chen, San Jose, CA (US);
Frances Anne Houle, Fremont, CA (US);
Simone Raoux, Santa Clara, CA (US);
Charles Thomas Rettner, San Jose, CA (US);
Alejandro Gabriel Schrott, New York, NY (US);
Yi-Chou Chen, San Jose, CA (US);
Frances Anne Houle, Fremont, CA (US);
Simone Raoux, Santa Clara, CA (US);
Charles Thomas Rettner, San Jose, CA (US);
Alejandro Gabriel Schrott, New York, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Macronix International Co., Ltd., Hsinchu, TW;
Abstract
A memory device utilizes a phase change material as the storage medium. The phase change material includes at least one of Ge, Sb, Te, Se, As, and S, as well as a nitride compound as a dopant. The memory device can be a solid-state memory cell with electrodes in electrical communication with the phase change medium, an optical phase change storage device in which data is read and written optically, or a storage device based on the principle of scanning probe microscopy.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile