The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 03, 2009
Filed:
Jul. 02, 2007
Byung-gil Choi, Yongin-si, KR;
Choong-keun Kwak, Suwon-si, KR;
Sang-beom Kang, Hwaseong-si, KR;
Joon-yong Choi, Seoul, KR;
Byung-gil Choi, Yongin-si, KR;
Choong-keun Kwak, Suwon-si, KR;
Sang-beom Kang, Hwaseong-si, KR;
Joon-yong Choi, Seoul, KR;
Samsung Electronics Co., Ltd., Suwon-si, KR;
Abstract
Provided are a phase-change memory device and method that maintains a resistance of a phase-change material in a set state within a constant resistance range. In the method, data is provided to a first phase-change memory cell and then it is first determined whether data stored in the first phase-change memory cell and the data provided to the first phase-change memory cell are identical. If the data stored in the first phase-change memory cell and the data provided to the first phase-change memory cell are not identical, a complementary write current is provided to the first phase-change memory cell and it is second determined whether the data stored in the first phase-change memory cell and the data provided to the first phase-change memory cell are identical. If the data stored in the first phase-change memory cell and the data provided to the first phase-change memory cell are identical, data is provided to a second phase-change memory cell.