The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 03, 2009
Filed:
May. 15, 2003
Cyril Cabral, Jr., Ossining, NY (US);
Kevin K. Chan, Staten Island, NY (US);
Guy Moshe Cohen, Mohegan Lake, NY (US);
Kathryn Wilder Guarini, Yorktown Heights, NY (US);
Christian Lavoie, Ossining, NY (US);
Paul Michael Solomon, Yorktown Heights, NY (US);
Ying Zhang, Yorktown Heights, NY (US);
Cyril Cabral, Jr., Ossining, NY (US);
Kevin K. Chan, Staten Island, NY (US);
Guy Moshe Cohen, Mohegan Lake, NY (US);
Kathryn Wilder Guarini, Yorktown Heights, NY (US);
Christian Lavoie, Ossining, NY (US);
Paul Michael Solomon, Yorktown Heights, NY (US);
Ying Zhang, Yorktown Heights, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A method (and structure formed thereby) of forming a metal silicide contact on a non-planar silicon containing region having controlled consumption of the silicon containing region, includes forming a blanket metal layer over the silicon containing region, forming a silicon layer over the metal layer, etching anisotropically and selectively with respect to the metal the silicon layer, reacting the metal with silicon at a first temperature to form a metal silicon alloy, etching unreacted portions of the metal layer, annealing at a second temperature to form an alloy of metal-Si, and selectively etching the unreacted silicon layer.