The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 03, 2009

Filed:

Aug. 16, 2005
Applicants:

Sadaaki Masuoka, Kawasaki, JP;

Hiroaki Ohkubo, Kawasaki, JP;

Yasutaka Nakashiba, Kawasaki, JP;

Inventors:

Sadaaki Masuoka, Kawasaki, JP;

Hiroaki Ohkubo, Kawasaki, JP;

Yasutaka Nakashiba, Kawasaki, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 51/05 (2006.01);
U.S. Cl.
CPC ...
Abstract

The present invention provides a semiconductor device comprising a capacitive element with a very uniform capacitive value as well as a method of manufacturing the semiconductor device. In a capacitive element formation regionof a semiconductor devicean N-type wellas a conductive layer is formed in a surface layer of a P-type semiconductor substrateA capacitive filmis deposited on a front surface of the semiconductor substrateon which the N-type wellis formed. The part of front surface of the semiconductor substratein which the capacitive filmis deposited is substantially flat. An upper electrodeis provided on the capacitive filmThe upper electrodeconstitutes a capacitive element (on-chip capacitor) together with the N-type welllocated opposite the upper electrodeacross the capacitive film


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