The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 03, 2009
Filed:
Jan. 11, 2006
Applicants:
Hsing-hua Chiu, Xindian, TW;
Tuung Luoh, Taipei, TW;
Chi-tung Huang, Hsinchu, TW;
Kuang-chao Chen, Hsinchu, TW;
Inventors:
Hsing-Hua Chiu, Xindian, TW;
Tuung Luoh, Taipei, TW;
Chi-Tung Huang, Hsinchu, TW;
Kuang-Chao Chen, Hsinchu, TW;
Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/4763 (2006.01);
U.S. Cl.
CPC ...
Abstract
A process for forming an ARC layer in the fabrication of a semiconductor device comprises forming a modified ARC layer that increases the resistance to crown defects and bridging and also provides better adhesion for the ARC layer with the underlying metal layer. The modified ARC layer can comprise two titanium nitride ARC layers, a titanium nitride/titanium/titanium nitride sandwich structure, a modified titanium nitride layer, or an extended thickness titanium nitride layer.