The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 03, 2009
Filed:
Mar. 09, 2006
John C. Foster, Mountain View, CA (US);
Scott Bell, San Jose, CA (US);
Allison Holbrook, San Jose, CA (US);
Simon S. Chan, Saratoga, CA (US);
Phillip Jones, Fremont, CA (US);
John C. Foster, Mountain View, CA (US);
Scott Bell, San Jose, CA (US);
Allison Holbrook, San Jose, CA (US);
Simon S. Chan, Saratoga, CA (US);
Phillip Jones, Fremont, CA (US);
Advanced Micro Devices, Inc., Sunnyvale, CA (US);
Spansion LLC, Sunnyvale, CA (US);
Abstract
A high K layer, such as aluminum oxide or hafnium oxide, may be formed with a deposition process that uses an ion implantation to damage portions of the high K material that are to be later etched. More particularly, in one implementation, a semiconductor device is manufactured by forming a first dielectric over a substrate, forming a charge storage element over the first dielectric, forming a second dielectric above the charge storage element, implantation ions into select portions of the second dielectric, and etching the ion implanted select portions of the second dielectric.