The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 7494928 B1

PDF
Full Text
Expired
Date of Patent:
Feb. 24, 2009

Filed:

Sep. 20, 2005
Applicants:

Shin-rung LU, Chu-Bei, TW;

Kun-hong Lin, Hsinchu, TW;

Inventors:

Shin-Rung Lu, Chu-Bei, TW;

Kun-Hong Lin, Hsinchu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/302 (2006.01); H01L 21/461 (2006.01);
U.S. Cl.
CPC ...
Abstract

A method for patterning passivation layers including providing a semiconductor wafer comprising metal interconnects; forming a dielectric passivation layer on the metal interconnects; forming a photosensitive polymeric passivation layer on the dielectric passivation layer; patterning the photosensitive polymeric passivation layer in a first patterning process to form a first opening revealing a portion of the dielectric passivation layer; and, patterning the portion of the dielectric passivation layer in a second patterning process to form at least a second opening in the dielectric passivation layer.


Find Patent Forward Citations

Lu, Shin-Rung. (2009). Method for patterning and etching a passivation layer (U.S. Patent No. 7494928). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/7494928

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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